Is there any research into the recovery of data stored in an EEPROM after the high-voltage bulk erase (not bytewise or pagewise erase) operation? I'm wondering about typical low-capacity EEPROMs which use Fowler–Nordheim tunneling and which have a dedicated erase pin that's brought to a high voltage to erase everything at once. I specify this to distinguish what I mean from "false" EEPROM like NOR flash.
I ask because I am trying to understand the security ramifications of using this for persistent storage of an encryption key, for example in a storage device with SED (Self-Encrypting Drive) capability.